InGaN Color Tunable Full Color Passive Matrix

A single material solution to a full color micro light emitting diode ( $\mu $ LED) display has remained elusive due distinct differences of each color, along with the difficulties integration. To address this an Indium Gallium Nitride (InGaN) passive matrix array is fabricated tunable LEDs from red at 640 nm blue 425 nm. The presented arrays build upon initial work V-groove explore applications in displays. Initial 5 notation="LaTeX">$\times5$ 20 \text{m}^{{2}}~\mu are through etching (GaN) down sapphire substrate form electrically isolated n-GaN columns LEDs, while spacer dielectric and indium tin oxide (ITO) layer anode rows. Color tunability mixing were demonstrated, where LED can act as complete pixel. Different emission colors demonstrated including red, yellow, green, blue. This forms basis on which technology further expand into displays solve problem solution.